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Description
MULTICOMP 2N2222 Bipolar (BJT) Single Transistor, NPN, 30 V, 500 mW, 800 mA, 100 hFEThe 2N2222 from Multicomp is a through hole, silicon planar NPN low power bipolar transistors in TO 18 metal can package. This transistor is used for switching, linear DC power supply and VHF amplifier applications. Collector emitter voltage (Vce) of 30V Continuous collector current (Ic) of 800mA Power dissipation of 500mW Operating junction temperature range from 65C to 200C Collector emitter saturation voltage of 1. 6V at 500mA collector current DC
- Collector emitter voltage (Vce) of 30V
- Continuous collector current (Ic) of 800mA
- Power dissipation of 500mW
- Operating junction temperature range from -65�C to 200�C
- Collector emitter saturation voltage of 1.6V at 500mA collector current
- DC current gain 30 at Ic=500mA
- Collector emitter breakdown voltage 30V
Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
Product details
| Power Dissipation Pd | 500mW |
| DC Collector Current | 800mA |
| Collector Emitter Voltage V(br)ceo | 30V |
| Transition Frequency ft | - |
| Operating Temperature Max | 200�C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 100hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-18 |
| MSL | - |
Other details
| Brand | MULTICOMP |
| Part Number | 2N2222 |
| Quantity | Each |
| Technical Data Sheet EN |
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