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Ships within 48 hours · Estimated delivery Aug 30 - Sep 4
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Description
INFINEON BSC009NE2LSATMA1 MOSFET Transistor, N Channel, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 VThe BSC009NE2LS is a N channel Power MOSFET features high DC and pulsed current capability. With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency. Lowest ON state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of battery management, O ring, e fuse and HOT SWAP application. The package has a standard footprint that allows thinner and smaller
- Lowest ON-state resistance
- High DC and pulsed current capability
- Easy to design-in
- Increased battery lifetime/system efficiency
- Saving space (reducing the number of devices needed)
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Industrial
Product details
| Power Dissipation Pd | 96W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 100A |
| Transistor Polarity | N Channel |
| No. of Pins | 8Pins |
| Threshold Voltage Vgs | 2.2V |
| Product Range | - |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 25V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TDSON |
| On Resistance Rds(on) | 750�ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | BSC009NE2LSATMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN | |
| Application Note EN |
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Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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